Vishay Single IRF620S 1 Type N-Channel Power MOSFET, 5.2 A, 200 V, 3-Pin TO-263 IRF620SPBF
- RS庫存編號:
- 180-8301
- 製造零件編號:
- IRF620SPBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
TWD2,485.00
(不含稅)
TWD2,609.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 700 件從 2026年8月10日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD49.70 | TWD2,485.00 |
| 100 - 150 | TWD48.70 | TWD2,435.00 |
| 200 + | TWD47.60 | TWD2,380.00 |
* 參考價格
- RS庫存編號:
- 180-8301
- 製造零件編號:
- IRF620SPBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRF620S | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.8Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRF620S | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.8Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay IRF620S Series Power MOSFET, 200V Drain Source Voltage, 50W Maximum Power Dissipation - IRF620SPBF
This power MOSFET is a surface-mounted N-channel transistor designed for high-voltage switching and power applications. It is supplied in a TO-263 package and offers a single-transistor configuration for compact board-level solutions. The component is suitable where controlled switching and thermal resilience are required in industrial and electronic supply designs.
Features and Benefits:
• 200V drain voltage enables high-voltage switching capability
• 5.2A continuous drain current supports moderate load currents
• 50W power dissipation allows sustained power handling
• 0.8Ω drain-source resistance reduces conduction losses
• 14nC typical gate charge improves switching efficiency
• Operates from -55°C to 150°C for wide thermal range
• 5.2A continuous drain current supports moderate load currents
• 50W power dissipation allows sustained power handling
• 0.8Ω drain-source resistance reduces conduction losses
• 14nC typical gate charge improves switching efficiency
• Operates from -55°C to 150°C for wide thermal range
Applications
• Suitable for 200V switching power supplies on PCBs
• Ideal for motor-drive gate switching in control circuits
• Used with PWM controllers in power-conversion designs
• Can be used for general-purpose high-voltage switching tasks
• Used in board-mounted power stage assemblies
• Ideal for motor-drive gate switching in control circuits
• Used with PWM controllers in power-conversion designs
• Can be used for general-purpose high-voltage switching tasks
• Used in board-mounted power stage assemblies
What mounting style does it require on a PCB?
It is a surface-mount device supplied in a TO-263 package requiring appropriate soldering pads and a thermal land for heat transfer.
What gate voltage limitations must designers observe?
The gate-source rating is limited to 20V maximum and designs should prevent exceeding this during drive or transients.
How many transistor elements are present on the die?
The component contains a single element per chip, simplifying parallel/series arrangements.
Are there environmental or material standards associated with the device?
It complies with RoHS 2002/95/EC and follows IEC 61249-2-21 material guidelines for manufacturing.
相關連結
- Vishay Single 1 Type N-Channel Power MOSFET 200 V TO-263
- Vishay SiHF620S Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Vishay Single Type N-Channel Power MOSFET 200 V TO-220AB
- Vishay SiHF620S Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 SIHF620S-GE3
- Vishay Single Type N-Channel Power MOSFET 200 V TO-220AB IRL620PBF
- Infineon IMBF1 Type N-Channel MOSFET 1700 V Enhancement, 7-Pin TO-263
- Vishay N-Channel N-Channel Mosfet 200 V, 3-Pin TO-263
- Infineon IMBF1 Type N-Channel MOSFET 1700 V Enhancement, 7-Pin TO-263 IMBF170R1K0M1XTMA1