Vishay Single IRF620S 1 Type N-Channel Power MOSFET, 5.2 A, 200 V, 3-Pin TO-263

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RS庫存編號:
180-8843
Distrelec 貨號:
304-30-843
製造零件編號:
IRF620SPBF
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5.2A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

IRF620S

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.8Ω

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

50W

Typical Gate Charge Qg @ Vgs

14nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
CN

Vishay IRF620S Series Power MOSFET, 200V Maximum Drain Source Voltage, 5.2A Maximum Continuous Drain Current - IRF620SPBF


This power MOSFET is a high-voltage N-channel transistor designed for switching and power-management tasks in electronic and industrial systems. It is supplied in a TO-263 surface-mount package for board-level mounting and is suited to applications requiring moderate current handling and elevated-temperature operation.

Features and Benefits:


• 200V drain-source rating enables high-voltage switching capability • 5.2A continuous drain current supports moderate load currents • 0.8Ω Rds(on) offers predictable conduction losses for heat budgeting • 14nC typical gate charge allows reasonable switching speed and drive design • 50W power dissipation assists thermal planning for power stages • -55°C to 150°C operating range tolerates wide temperature environments

Applications


• Suitable for switching power supplies in industrial equipment • Ideal for motor-drive gate stages with moderate current needs • Used for DC-DC converters in automation systems • Can be used for load switching in electrical control panels

What mounting considerations apply for heat management?


The TO-263 SMD package requires a suitably sized copper pad and thermal vias to spread dissipated power and maintain junction temperature within limits.

What gate-drive voltage range should I design for?


Gate-source voltage must be kept within ±20V, so drive circuits should limit applied gate amplitude accordingly.

How does device ruggedness affect reliability at elevated temperature?


The maximum operating temperature of 150°C permits use in hot environments, but continuous dissipation near the 50W limit will require effective PCB thermal design to avoid thermal overstress.

Are there environmental standards relevant to procurement?


The component conforms to RoHS requirements and follows relevant material specifications for PCB assembly processes.

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