Vishay Single IRF620S 1 Type N-Channel Power MOSFET, 5.2 A, 200 V, 3-Pin TO-263
- RS庫存編號:
- 180-8843
- Distrelec 貨號:
- 304-30-843
- 製造零件編號:
- IRF620SPBF
- 製造商:
- Vishay
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TWD389.00
(不含稅)
TWD408.45
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD77.80 | TWD389.00 |
| 15 - 20 | TWD75.80 | TWD379.00 |
| 25 + | TWD74.80 | TWD374.00 |
* 參考價格
- RS庫存編號:
- 180-8843
- Distrelec 貨號:
- 304-30-843
- 製造零件編號:
- IRF620SPBF
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | IRF620S | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.8Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series IRF620S | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.8Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay IRF620S Series Power MOSFET, 200V Maximum Drain Source Voltage, 5.2A Maximum Continuous Drain Current - IRF620SPBF
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-management tasks in electronic and industrial systems. It is supplied in a TO-263 surface-mount package for board-level mounting and is suited to applications requiring moderate current handling and elevated-temperature operation.
Features and Benefits:
• 200V drain-source rating enables high-voltage switching capability • 5.2A continuous drain current supports moderate load currents • 0.8Ω Rds(on) offers predictable conduction losses for heat budgeting • 14nC typical gate charge allows reasonable switching speed and drive design • 50W power dissipation assists thermal planning for power stages • -55°C to 150°C operating range tolerates wide temperature environments
Applications
• Suitable for switching power supplies in industrial equipment • Ideal for motor-drive gate stages with moderate current needs • Used for DC-DC converters in automation systems • Can be used for load switching in electrical control panels
What mounting considerations apply for heat management?
The TO-263 SMD package requires a suitably sized copper pad and thermal vias to spread dissipated power and maintain junction temperature within limits.
What gate-drive voltage range should I design for?
Gate-source voltage must be kept within ±20V, so drive circuits should limit applied gate amplitude accordingly.
How does device ruggedness affect reliability at elevated temperature?
The maximum operating temperature of 150°C permits use in hot environments, but continuous dissipation near the 50W limit will require effective PCB thermal design to avoid thermal overstress.
Are there environmental standards relevant to procurement?
The component conforms to RoHS requirements and follows relevant material specifications for PCB assembly processes.
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