Vishay IRF630 Type N-Channel Power MOSFET, 5.9 A, 200 V, 3-Pin TO-220AB IRF630PBF
- RS庫存編號:
- 256-7275
- 製造零件編號:
- IRF630PBF
- 製造商:
- Vishay
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TWD153.00
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TWD160.65
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- 加上 1,015 件從 2026年6月29日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD30.60 | TWD153.00 |
| 10 - 20 | TWD29.00 | TWD145.00 |
| 25 - 95 | TWD27.40 | TWD137.00 |
| 100 - 495 | TWD25.60 | TWD128.00 |
| 500 + | TWD23.40 | TWD117.00 |
* 參考價格
- RS庫存編號:
- 256-7275
- 製造零件編號:
- IRF630PBF
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.9A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220AB | |
| Series | IRF630 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.4Ω | |
| Maximum Power Dissipation Pd | 74W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Height | 4.65mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.9A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220AB | ||
Series IRF630 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.4Ω | ||
Maximum Power Dissipation Pd 74W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Gate Source Voltage Vgs 10V | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Height 4.65mm | ||
Automotive Standard No | ||
Vishay IRF630 Series Power MOSFET, 200V Maximum Drain Source Voltage, 5.9A Maximum Continuous Drain Current - IRF630PBF
This power MOSFET is a through-hole N-channel transistor designed for switching and amplification in industrial electronic systems. It operates at high voltage and is suitable for use where substantial power handling and thermal endurance are required. The device is housed in a TO-220AB package and intended for integration into conventional board-mount assemblies.
Features and Benefits:
• 200V drain-source rating enabling high-voltage switching applications • 5.9A continuous drain current for sustained load handling • 0.4Ω Rds(on) reducing conduction losses under load • 74W power dissipation allowing elevated power transfer • 43nC typical gate charge for predictable drive requirements • Rated to +150°C for extended temperature operation
Applications
• Suitable for switch-mode power supplies requiring high-voltage transistors • Ideal for motor-control stages in industrial automation equipment • Used for high-voltage relays and solid-state switching modules • Can be used for prototype and repair in through-hole power designs • Used with discrete amplifier circuits needing substantial power handling
What gate-drive constraints should I consider for switching?
The gate must tolerate up to 10V between gate and source
design the driver to deliver sufficient charge for the typical 43nC gate charge to achieve the desired switching speed.
How should thermal management be approached on this component?
Mount the package on a heatsink or ensure adequate PCB copper and airflow to dissipate up to 74W, and account for the maximum junction rating when calculating thermal resistance.
What mounting and connection format does it require?
It is a through-hole device with three pins in a TO-220AB package compatible with standard through-hole sockets and heatsink attachment methods.
What environmental temperature range is supported during operation?
It is specified for operation down to -55°C and up to +150°C, enabling use across a wide range of ambient conditions.
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