onsemi NTH Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-247

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RS庫存編號:
172-8790
製造零件編號:
NTHL082N65S3F
製造商:
onsemi
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品牌

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

NTH

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

82mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

313W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

81nC

Maximum Operating Temperature

150°C

Length

15.87mm

Standards/Approvals

No

Height

20.82mm

Width

4.82 mm

Automotive Standard

No

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SuperFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 81 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)

Lower switching loss

Excellent body diode performance (low Qrr, robust body diode)

Higher system reliability in LLC and Phase shift full bridge circuit

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 70 mΩ

Applications

Telecommunication

Cloud system

Industrial

Telecom power

Server power

EV charger

Solar / UPS

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