onsemi NTH Type N-Channel MOSFET, 67 A, 650 V Enhancement, 4-Pin TO-247-4L NTH4L023N065M3S

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  • 2026年6月01日 發貨
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包裝方式:
RS庫存編號:
277-043
製造零件編號:
NTH4L023N065M3S
製造商:
onsemi
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品牌

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

67A

Maximum Drain Source Voltage Vds

650V

Series

NTH

Package Type

TO-247-4L

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

23mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

69nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

245W

Forward Voltage Vf

6V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS with exemption 7a, Halide Free, Pb-Free 2LI

COO (Country of Origin):
CN
The ON Semiconductor SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

Ultra low gate charge

High speed switching with low capacitance

100% avalanche tested

Device is Halide Free and RoHS compliant

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