onsemi NTH Type N-Channel MOSFET, 50 A, 650 V N, 4-Pin TO-247-4L NTH4L032N065M3S

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包裝方式:
RS庫存編號:
327-805
製造零件編號:
NTH4L032N065M3S
製造商:
onsemi
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品牌

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247-4L

Series

NTH

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Forward Voltage Vf

6V

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

187W

Typical Gate Charge Qg @ Vgs

55nC

Maximum Operating Temperature

175°C

Standards/Approvals

Halide Free and RoHS with Exemption 7a, Pb-Free 2LI

Automotive Standard

No

COO (Country of Origin):
CN
The ON Semiconductor Silicon Carbide (SiC) MOSFET, EliteSiC, is a 650 V, 32 mΩ device in the M3S TO247-4L package. It features ultra-low gate charge (QG(tot) = 55 nC) and high-speed switching with low capacitance (Coss = 114 pF). The device is 100% avalanche tested and is halide-free and RoHS compliant with exemption 7a. It is also Pb-free on the second-level interconnection, making it suitable for demanding power electronics applications.

High efficiency and reduced switching losses

Robust and reliable operation in harsh environments

Ideal for automotive industrial and renewable energy applications

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