製造零件編號

Vishay TrenchFET Type N-Channel MOSFET, 19 A, 40 V Enhancement, 8-Pin SOIC

RS庫存編號:: 165-2752
製造零件編號:: SI4840BDY-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 19 A, 40 V Enhancement, 8-Pin SOIC

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2500 件）*

TWD48,250.00

(不含稅)

TWD50,650.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 2,500 個，準備發貨

單位	每單位	每卷*
2500 - 10000	TWD19.30	TWD48,250.00
12500 +	TWD18.90	TWD47,250.00

* 參考價格

RS庫存編號:: 165-2752
製造零件編號:: SI4840BDY-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOIC
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.012Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	6W
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	33nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS, JEDEC JS709A, Halogen Free (IEC 61249-2-21)
	Length	5mm
	Width	4 mm
	Height	1.55mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOIC
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.012Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 6W
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 33nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS, JEDEC JS709A, Halogen Free (IEC 61249-2-21)
	Length 5mm
	Width 4 mm
	Height 1.55mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay TrenchFET Type N-Channel MOSFET, 19 A, 40 V Enhancement, 8-Pin SOIC

訂單超過 $1,300.00 免費送貨

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

相關連結