製造零件編號

Vishay TrenchFET Type N-Channel Power MOSFET, 20.5 A, 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3

RS庫存編號:: 812-3195
製造零件編號:: SI4124DY-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type N-Channel Power MOSFET, 20.5 A, 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 10 件）*

TWD394.00

(不含稅)

TWD413.70

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 2,200 個，準備發貨

單位	每單位	每包*
10 - 620	TWD39.40	TWD394.00
630 - 1240	TWD38.60	TWD386.00
1250 +	TWD38.00	TWD380.00

* 參考價格

RS庫存編號:: 812-3195
製造零件編號:: SI4124DY-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	20.5A
	Maximum Drain Source Voltage Vds	40V
	Series	TrenchFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.009Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	5.7W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	21nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Width	4 mm
	Height	1.55mm
	Standards/Approvals	IEC 61249-2-21
	Length	5mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 20.5A
	Maximum Drain Source Voltage Vds 40V
	Series TrenchFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.009Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 5.7W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 21nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Width 4 mm
	Height 1.55mm
	Standards/Approvals IEC 61249-2-21
	Length 5mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay TrenchFET Type N-Channel Power MOSFET, 20.5 A, 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3

訂單超過 $1,300.00 免費送貨

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