Vishay Isolated TrenchFET 2 Type N-Channel MOSFET, 6.5 A, 60 V Enhancement, 8-Pin SOIC SI4946BEY-T1-GE3

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包裝方式：
RS庫存編號:
787-9027
製造零件編號:
SI4946BEY-T1-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

17nC

Maximum Power Dissipation Pd

3.7W

Maximum Operating Temperature

175°C

Transistor Configuration

Isolated

Height

1.55mm

Length

5mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Dual N-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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