Vishay TrenchFET Type N-Channel MOSFET, 10.9 A, 30 V Enhancement, 8-Pin SOIC SI4128DY-T1-GE3
- RS庫存編號:
- 710-3311
- 製造零件編號:
- SI4128DY-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD130.00
(不含稅)
TWD136.50
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 125 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | TWD26.00 | TWD130.00 |
| 625 - 1245 | TWD25.40 | TWD127.00 |
| 1250 + | TWD25.20 | TWD126.00 |
* 參考價格
- RS庫存編號:
- 710-3311
- 製造零件編號:
- SI4128DY-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 5W | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 5W | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Height 1.5mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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