製造零件編號

Vishay TrenchFET Type N-Channel MOSFET, 10.9 A, 30 V Enhancement, 8-Pin SOIC SI4128DY-T1-GE3

RS庫存編號:: 710-3311
製造零件編號:: SI4128DY-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 10.9 A, 30 V Enhancement, 8-Pin SOIC SI4128DY-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 5 件）*

TWD116.00

(不含稅)

TWD121.80

訂單超過 $1,300.00 免費送貨

正在逐步停售

最終 125 個，準備發貨

單位	每單位	每包*
5 - 620	TWD23.20	TWD116.00
625 - 1245	TWD22.60	TWD113.00
1250 +	TWD22.40	TWD112.00

* 參考價格

RS庫存編號:: 710-3311
製造零件編號:: SI4128DY-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10.9A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.03Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	3.8nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	5W
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	150°C
	Width	4 mm
	Height	1.5mm
	Standards/Approvals	IEC 61249-2-21
	Length	5mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10.9A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.03Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 3.8nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 5W
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 150°C
	Width 4 mm
	Height 1.5mm
	Standards/Approvals IEC 61249-2-21
	Length 5mm
	Automotive Standard No

Vishay TrenchFET Type N-Channel MOSFET, 10.9 A, 30 V Enhancement, 8-Pin SOIC SI4128DY-T1-GE3

訂單超過 $1,300.00 免費送貨

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