製造零件編號

Vishay Si4164DY Type N-Channel TrenchFET Power MOSFET, 30 A, 30 V Enhancement, 8-Pin SOIC

RS庫存編號:: 165-7275
製造零件編號:: SI4164DY-T1-GE3
製造商:: Vishay

Vishay Si4164DY Type N-Channel TrenchFET Power MOSFET, 30 A, 30 V Enhancement, 8-Pin SOIC

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2500 件）*

TWD58,000.00

(不含稅)

TWD60,900.00

訂單超過 $1,300.00 免費送貨

庫存資訊目前無法查詢

單位	每單位	每卷*
2500 - 2500	TWD23.20	TWD58,000.00
5000 +	TWD22.50	TWD56,250.00

* 參考價格

RS庫存編號:: 165-7275
製造零件編號:: SI4164DY-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	TrenchFET Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOIC
	Series	Si4164DY
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0032Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	26.5nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	6W
	Maximum Gate Source Voltage Vgs	±20 V
	Forward Voltage Vf	0.72V
	Maximum Operating Temperature	150°C
	Height	1.55mm
	Standards/Approvals	JEDEC JS709A, RoHS
	Width	4 mm
	Length	5mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type TrenchFET Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOIC
	Series Si4164DY
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0032Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 26.5nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 6W
	Maximum Gate Source Voltage Vgs ±20 V
	Forward Voltage Vf 0.72V
	Maximum Operating Temperature 150°C
	Height 1.55mm
	Standards/Approvals JEDEC JS709A, RoHS
	Width 4 mm
	Length 5mm
	Automotive Standard No

COO (Country of Origin):: TW

Vishay Si4164DY Type N-Channel TrenchFET Power MOSFET, 30 A, 30 V Enhancement, 8-Pin SOIC

訂單超過 $1,300.00 免費送貨

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