N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 IXYS IXFH60N65X2
- RS庫存編號:
- 146-4372
- 製造零件編號:
- IXFH60N65X2
- 製造商:
- IXYS
可享批量折扣
單價(不含稅) 個
TWD355.00
(不含稅)
TWD372.75
(含稅)
38 現貨庫存,可於6工作日發貨。
單位 | 每單位 |
1 - 7 | TWD355.00 |
8 - 14 | TWD346.00 |
15 + | TWD340.00 |
- RS庫存編號:
- 146-4372
- 製造零件編號:
- IXFH60N65X2
- 製造商:
- IXYS
N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
Low R and Q
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
屬性 | 值 |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 60 A |
Maximum Drain Source Voltage | 650 V |
Package Type | TO-247 |
Series | HiperFET |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 52 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Minimum Gate Threshold Voltage | 3.5V |
Maximum Power Dissipation | 780 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Length | 16.13mm |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 108 nC @ 10 V |
Width | 5.21mm |
Number of Elements per Chip | 1 |
Height | 21.34mm |
Forward Diode Voltage | 1.4V |
Minimum Operating Temperature | -55 °C |