IXYS HiperFET Type N-Channel MOSFET, 80 A, 650 V Enhancement, 3-Pin TO-247 IXFH80N65X2

RS庫存編號:: 146-4236
製造零件編號:: IXFH80N65X2
製造商:: IXYS

IXYS HiperFET Type N-Channel MOSFET, 80 A, 650 V Enhancement, 3-Pin TO-247 IXFH80N65X2

可享批量折扣

小計（1 管，共 30 件）*

TWD8,760.00

(不含稅)

TWD9,198.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2027年1月18日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
30 - 90	TWD292.00	TWD8,760.00
120 - 270	TWD283.30	TWD8,499.00
300 - 570	TWD274.50	TWD8,235.00
600 - 870	TWD268.70	TWD8,061.00
900 +	TWD262.80	TWD7,884.00

* 參考價格

選取全部	屬性	值
	品牌	IXYS
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	650V
	Series	HiperFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	38mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.4V
	Typical Gate Charge Qg @ Vgs	140nC
	Maximum Power Dissipation Pd	890W
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Height	21.34mm
	Length	16.13mm
	Standards/Approvals	No
	Width	5.21 mm
	Distrelec Product Id	304-30-535
	Automotive Standard	No

	選取全部
	品牌 IXYS
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 650V
	Series HiperFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 38mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.4V
	Typical Gate Charge Qg @ Vgs 140nC
	Maximum Power Dissipation Pd 890W
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Height 21.34mm
	Length 16.13mm
	Standards/Approvals No
	Width 5.21 mm
	Distrelec Product Id 304-30-535
	Automotive Standard No

IXYS HiperFET Type N-Channel MOSFET, 80 A, 650 V Enhancement, 3-Pin TO-247 IXFH80N65X2

訂單超過 $1,300.00 免費送貨

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