IXYS HiperFET, X2-Class Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247 IXFH34N65X2
- RS庫存編號:
- 917-1467
- Distrelec 貨號:
- 304-37-851
- 製造零件編號:
- IXFH34N65X2
- 製造商:
- IXYS
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 2 件)*
TWD490.00
(不含稅)
TWD514.50
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 6 | TWD245.00 | TWD490.00 |
| 8 - 14 | TWD239.50 | TWD479.00 |
| 16 + | TWD235.00 | TWD470.00 |
* 參考價格
- RS庫存編號:
- 917-1467
- Distrelec 貨號:
- 304-37-851
- 製造零件編號:
- IXFH34N65X2
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | HiperFET, X2-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Power Dissipation Pd | 540W | |
| Maximum Operating Temperature | 150°C | |
| Width | 21.45 mm | |
| Standards/Approvals | No | |
| Height | 5.3mm | |
| Length | 16.24mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series HiperFET, X2-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Power Dissipation Pd 540W | ||
Maximum Operating Temperature 150°C | ||
Width 21.45 mm | ||
Standards/Approvals No | ||
Height 5.3mm | ||
Length 16.24mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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