IXYS Type N-Channel MOSFET, 100 A, 650 V Enhancement, 3-Pin TO-264
- RS庫存編號:
- 168-4813
- 製造零件編號:
- IXFK100N65X2
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 25 件）*
TWD11,025.00
(不含稅)
TWD11,576.25
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 175 件從 2026年1月22日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 25 | TWD441.00 | TWD11,025.00 |
| 50 - 75 | TWD431.40 | TWD10,785.00 |
| 100 + | TWD421.80 | TWD10,545.00 |
* 參考價格
- RS庫存編號:
- 168-4813
- 製造零件編號:
- IXFK100N65X2
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.04kW | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Length | 20.3mm | |
| Width | 26.3 mm | |
| Height | 5.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.04kW | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Length 20.3mm | ||
Width 26.3 mm | ||
Height 5.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
相關連結
- IXYS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-264 IXFK100N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-264
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-264 IXTK120N65X2
- IXYS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-264