IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-268

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TWD433.00

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TWD454.65

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RS庫存編號:
146-4378
Distrelec 貨號:
302-53-402
製造零件編號:
IXFT60N65X2HV
製造商:
IXYS
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品牌

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Series

HiperFET

Package Type

TO-268

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.4V

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

108nC

Maximum Power Dissipation Pd

780W

Maximum Operating Temperature

150°C

Width

15.15 mm

Length

16.05mm

Height

5.1mm

Standards/Approvals

No

Automotive Standard

No

Low RDS(ON) and Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

Resonant mode power supplies

High intensity discharge (HID) lamp ballast

AC and DC motor drives

DC-DC converters

Robotic and servo control

Battery chargers

3-level solar inverters

LED lighting

Unmanned Aerial Vehicles (UAVs)

Higher efficiency

High power density

Easy to mount

Space savings

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