IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-268 IXFT60N65X2HV
- RS庫存編號:
- 146-4235
- 製造零件編號:
- IXFT60N65X2HV
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD7,968.00
(不含稅)
TWD8,366.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月26日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD265.60 | TWD7,968.00 |
| 60 - 90 | TWD259.80 | TWD7,794.00 |
| 120 + | TWD254.00 | TWD7,620.00 |
* 參考價格
- RS庫存編號:
- 146-4235
- 製造零件編號:
- IXFT60N65X2HV
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | HiperFET | |
| Package Type | TO-268 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 780W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.1mm | |
| Length | 16.05mm | |
| Width | 15.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series HiperFET | ||
Package Type TO-268 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 780W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Height 5.1mm | ||
Length 16.05mm | ||
Width 15.15 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Low RDS(ON) and Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Resonant mode power supplies
High intensity discharge (HID) lamp ballast
AC and DC motor drives
DC-DC converters
Robotic and servo control
Battery chargers
3-level solar inverters
LED lighting
Unmanned Aerial Vehicles (UAVs)
Higher efficiency
High power density
Easy to mount
Space savings
相關連結
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-268
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXFH60N65X2
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXFH80N65X2
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227 IXFN150N65X2
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227 IXFN170N65X2