ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007
- RS庫存編號:
- 144-2254
- 製造零件編號:
- BSM180D12P3C007
- 製造商:
- ROHM
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- RS庫存編號:
- 144-2254
- 製造零件編號:
- BSM180D12P3C007
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Series | BSM | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 17mm | |
| Length | 122mm | |
| Width | 45.6mm | |
| Number of Elements per Chip | 2 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Series BSM | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 17mm | ||
Length 122mm | ||
Width 45.6mm | ||
Number of Elements per Chip 2 | ||
- COO (Country of Origin):
- JP
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
相關連結
- ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007
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- ROHM Half Bridge BSM Type N-Channel SiC Power Module 1200 V Enhancement, 4-Pin BSM120D12P2C005
- ROHM Type N-Channel SiC Power Module 1200 V BSM180D12P2C101
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