Vishay TrenchFET N-Channel MOSFET, 330 A, 60 V Enhancement, 8-Pin PowerPAK SIRS4614EPW-T1-RE3
- RS庫存編號:
- 904-978
- 製造零件編號:
- SIRS4614EPW-T1-RE3
- 製造商:
- Vishay
N
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TWD117.00
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TWD122.85
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訂單超過 $1,300.00 免費送貨
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- 從 2027年2月16日 發貨
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|---|---|
| 1 - 9 | TWD117.00 |
| 10 - 24 | TWD76.00 |
| 25 - 99 | TWD45.00 |
| 100 - 499 | TWD44.00 |
| 500 + | TWD43.00 |
* 參考價格
- RS庫存編號:
- 904-978
- 製造零件編號:
- SIRS4614EPW-T1-RE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 330A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | PowerPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.000995Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 205W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | ROHS | |
| Width | 5mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 330A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type PowerPAK | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.000995Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 205W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals ROHS | ||
Width 5mm | ||
Length 6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay power MOSFET designed for high-efficiency operations, specifically tackling power losses associated with conduction in electronic applications. This component is characterised by its robust construction and durability under varying conditions.
TrenchFET Gen IV technology ensures excellent performance with minimal power loss
Rated for a drain-source voltage of 60 V, providing stability in high-voltage environments
Low on-state resistance maximises efficiency in power management applications
Designed with enhanced power dissipation capabilities for reduced thermal issues
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