Vishay TrenchFET N-Channel MOSFET, 9 A, 60 V Enhancement, 6-Pin PowerPAK SIA4620DJ-T1-GE3

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  • 2027年2月16日 發貨
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RS庫存編號:
904-973
製造零件編號:
SIA4620DJ-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK

Series

TrenchFET

Mount Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance Rds

0.023Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

17.9W

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

4.4nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

ROHS

Width

2.05mm

Length

2.05mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed for efficient power management. It excels in various applications due to its high performance metrics and Compact packaging, making it Ideal for modern electronic designs.

Operates at a maximum drain-source voltage of 60 V

Features low on-state resistance for enhanced efficiency

Offers a continuous drain current up to 8.6 A at 25 °C

Includes extensive testing for reliability and performance

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