Vishay TrenchFET N-Channel MOSFET, 208 A, 45 V Enhancement, 8-Pin PowerPAK SIR608DP-T1-BE3

N
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TWD86.10

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  • 2027年2月17日 發貨
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25 - 99TWD32.00
100 - 499TWD31.00
500 +TWD30.00

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RS庫存編號:
904-976
製造零件編號:
SIR608DP-T1-BE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

208A

Maximum Drain Source Voltage Vds

45V

Package Type

PowerPAK

Series

TrenchFET

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0012Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

50.5nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

104W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5.15mm

Length

6.15mm

Standards/Approvals

ROHS

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay power MOSFET designed to provide efficient switching and a high power density. With a robust performance profile, it features low on-resistance, ensuring optimal operation within DC/DC converter applications.

TrenchFET Gen IV design ensures excellent efficiency

45 V Drain-source breakdown voltage for reliable performance

Low on-state resistance rated at 0.00120 Ohm at 10V

Robust continuous drain current of 208 A at 25 °C

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