Vishay S N-Channel MOSFET, 27 A, 650 V N, 3-Pin TO-263 SIHB135N65S-GE3
- RS庫存編號:
- 878-897
- 製造零件編號:
- SIHB135N65S-GE3
- 製造商:
- Vishay
N
可享批量折扣
查看批量定價選項小計（1 件）*
TWD79.00
(不含稅)
TWD82.95
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年2月16日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD79.00 |
| 10 - 24 | TWD51.00 |
| 25 - 99 | TWD30.00 |
| 100 + | TWD29.00 |
* 參考價格
- RS庫存編號:
- 878-897
- 製造零件編號:
- SIHB135N65S-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | S | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.121Ω | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 255W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series S | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.121Ω | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 255W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFET delivers exceptional performance for energy-efficient applications. Specifically designed for demanding power management, it ensures minimal losses during operation, enhancing overall system reliability and efficiency.
Utilises the latest SF series technology for cutting-edge efficiency
Exhibits low figure of merit, significantly reducing power dissipation
Offers lower effective capacitance for improved switching performance
Avalanche energy rated to withstand harsh conditions
Single configuration optimises space and simplifies design
相關連結
- Vishay S Series N channel-Channel MOSFET 650 V N, 3-Pin TO-220 SIHP135N65S-GE3
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB240N65E-GE3
- Vishay E Type N-Channel Power MOSFET 650 V, 3-Pin TO-263 SIHB24N65E-GE3
- Vishay EF Type N-Channel MOSFET 650 V Depletion, 3-Pin TO-263 SIHB055N60EF-GE3
- Vishay SIHB Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB120N60E-T5-GE3
- Vishay E Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB120N60E-T1-GE3
- Vishay N-Channel N-Channel Mosfet 200 V, 3-Pin TO-263 SUM90140E-GE3