Vishay Type N-Channel MOSFET, 24 A, 650 V TO-263 SIHB24N65E-GE3
- RS庫存編號:
- 256-7413
- 製造零件編號:
- SIHB24N65E-GE3
- 製造商:
- Vishay
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TWD161.00
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TWD169.05
(含稅)
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* 參考價格
- RS庫存編號:
- 256-7413
- 製造零件編號:
- SIHB24N65E-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor E series power mosfet have low figure of merit (FOM) Ron x Qg and low input capacitance (Ciss).
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
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