Vishay E Type N-Channel Power MOSFET, 24 A, 650 V, 3-Pin TO-263

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RS庫存編號:
256-7412
製造零件編號:
SIHB24N65E-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

650V

Series

E

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.145Ω

Typical Gate Charge Qg @ Vgs

122nC

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

250W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 24A Maximum Continuous Drain Current - SIHB24N65E-GE3


This power MOSFET is a high-voltage N-channel transistor designed for switching and power-management roles in electronic and industrial systems. It operates across a broad temperature range and is supplied in a surface-mount TO-263 package suitable for integration onto populated assemblies where elevated voltage handling is required.

Features and Benefits:


• 650V maximum drain-source voltage enabling high-voltage switching
• 24A continuous drain current supporting substantial load handling
• 0.145Ω Rds(on) reducing conduction losses in power paths
• 250W power dissipation allowing sustained thermal load
• 122nC typical gate charge for predictable gate-drive requirements
• 30V gate-source rating providing wide gate-drive margin

Applications


• Suitable for SMPS primary-side switching in high-voltage supplies
• Ideal for industrial motor drive front-end switches
• Used for high-voltage DC-DC conversion in automation systems
• Can be used for power-stage switches in welding or heating controllers

What thermal limits should I consider for heavy-duty operation?


The device is rated to operate up to +150°C junction temperature and down to -55°C, so thermal management such as appropriate heatsinking or PCB copper area is required to maintain safe junction temperatures at high power dissipation.

How does the gate charge affect drive circuitry selection?


With a typical gate charge of 122nC at the specified gate voltage, drive circuits must source and sink sufficient current to achieve the required switching speed while considering switching losses and driver power capability.

What mounting considerations are needed for assembly reliability?


It is provided in a TO-263 surface-mount package with three pins, so standard reflow soldering processes and correct pad design should be used to ensure mechanical and thermal connection.

Which environmental or regulatory attribute is included?


The component conforms to RoHS requirements, indicating it meets the specified restrictions on hazardous substances.

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