STMicroelectronics Sct N channel-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4

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RS庫存編號:
719-470
製造零件編號:
SCT025W120G3-4
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

1200V

Series

Sct

Package Type

Hip-247-4

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

388W

Typical Gate Charge Qg @ Vgs

73nC

Forward Voltage Vf

2.7V

Maximum Operating Temperature

175°C

Length

15.9mm

Height

25.27mm

Width

5.1 mm

COO (Country of Origin):
CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Very high operating junction temperature capability (TJ equal to 200 °C)

Source sensing pin for increased efficiency

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