STMicroelectronics SCT N-Channel MOSFET, 40 A, 1.2 kV Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4
- RS庫存編號:
- 214-957
- 製造零件編號:
- SCT040W120G3-4
- 製造商:
- STMicroelectronics
小計（1 管，共 30 件）*
TWD15,915.00
(不含稅)
TWD16,710.60
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 30 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 30 + | TWD530.50 | TWD15,915.00 |
* 參考價格
- RS庫存編號:
- 214-957
- 製造零件編號:
- SCT040W120G3-4
- 製造商:
- STMicroelectronics
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Hip-247-4 | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Power Dissipation Pd | 312W | |
| Maximum Gate Source Voltage Vgs | -10V, 22V | |
| Forward Voltage Vf | 1.2kV | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | RoHS, ECOPACK2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Hip-247-4 | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Power Dissipation Pd 312W | ||
Maximum Gate Source Voltage Vgs -10V, 22V | ||
Forward Voltage Vf 1.2kV | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals RoHS, ECOPACK2 | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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