STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin Hip-247
- RS庫存編號:
- 239-5529
- 製造零件編號:
- SCTW60N120G2
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD29,094.00
(不含稅)
TWD30,548.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 240 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD969.80 | TWD29,094.00 |
| 60 + | TWD940.70 | TWD28,221.00 |
* 參考價格
- RS庫存編號:
- 239-5529
- 製造零件編號:
- SCTW60N120G2
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 73mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3V | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Maximum Gate Source Voltage Vgs | 18 V | |
| Maximum Power Dissipation Pd | 389W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Height | 5mm | |
| Length | 34.8mm | |
| Standards/Approvals | UL | |
| Width | 15.6 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 73mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3V | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Maximum Gate Source Voltage Vgs 18 V | ||
Maximum Power Dissipation Pd 389W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Height 5mm | ||
Length 34.8mm | ||
Standards/Approvals UL | ||
Width 15.6 mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability
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