STMicroelectronics SCT N-Channel MOSFET, 65 A, 1.2 kV Depletion, 3-Pin Hip-247 SCT50N120

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RS庫存編號:
202-5478
製造零件編號:
SCT50N120
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

1.2kV

Series

SCT

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.59Ω

Channel Mode

Depletion

Maximum Power Dissipation Pd

318W

Forward Voltage Vf

3.5V

Typical Gate Charge Qg @ Vgs

122nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25V

Maximum Operating Temperature

200°C

Standards/Approvals

No

Length

15.75mm

Width

5.15mm

Height

34.95mm

Automotive Standard

No

The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.

Very fast and robust intrinsic body diode

Low capacitance

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