STMicroelectronics SCT Type N-Channel SiC Power Module, 12 A, 1200 V Depletion, 3-Pin Hip-247
- RS庫存編號:
- 202-4776
- 製造零件編號:
- SCT10N120AG
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD9,475.00
(不含稅)
TWD9,948.75
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 18 個，準備發貨
管 | 每管 | 每單位* |
|---|---|---|
| 1 - 1 | TWD9,475.00 | TWD315.833 |
| 2 - 3 | TWD9,191.00 | TWD306.367 |
| 4 + | TWD8,915.00 | TWD297.167 |
* 參考價格
- RS庫存編號:
- 202-4776
- 製造零件編號:
- SCT10N120AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | SiC Power Module | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.52Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 150W | |
| Forward Voltage Vf | 4.3V | |
| Maximum Operating Temperature | 200°C | |
| Width | 5.15 mm | |
| Length | 15.75mm | |
| Height | 34.95mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type SiC Power Module | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.52Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 150W | ||
Forward Voltage Vf 4.3V | ||
Maximum Operating Temperature 200°C | ||
Width 5.15 mm | ||
Length 15.75mm | ||
Height 34.95mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Very fast and robust intrinsic body diode
Low capacitance
相關連結
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