STMicroelectronics SCT Type N-Channel MOSFET, 56 A, 1200 V Enhancement, 3-Pin Hip-247
- RS庫存編號:
- 215-073
- 製造零件編號:
- SCT025W120G3AG
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 件）*
TWD1,249.00
(不含稅)
TWD1,311.45
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 30 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 + | TWD1,249.00 |
* 參考價格
- RS庫存編號:
- 215-073
- 製造零件編號:
- SCT025W120G3AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Power Dissipation Pd | 388W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Height | 5mm | |
| Length | 34.8mm | |
| Width | 15.6 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Power Dissipation Pd 388W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Height 5mm | ||
Length 34.8mm | ||
Width 15.6 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
相關連結
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247 SCT025W120G3AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247 SCT040W120G3AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247 SCTW60N120G2
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Depletion, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Depletion, 3-Pin Hip-247