STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 4-Pin SCT070W120G3-4AG
- RS庫存編號:
- 215-244
- 製造零件編號:
- SCT070W120G3-4AG
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 管，共 30 件）*
TWD14,025.00
(不含稅)
TWD14,726.40
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每管* |
|---|---|---|
| 30 + | TWD467.50 | TWD14,025.00 |
* 參考價格
- RS庫存編號:
- 215-244
- 製造零件編號:
- SCT070W120G3-4AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Power Dissipation Pd | 236W | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Power Dissipation Pd 236W | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Extremely low gate charge and input capacitance
Very fast and robust intrinsic body diode
相關連結
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT020W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT025W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT040W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT015W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 4-Pin SCT027W65G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin