STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 4-Pin SCT070W120G3-4AG
- RS庫存編號:
- 215-244
- 製造零件編號:
- SCT070W120G3-4AG
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 管，共 30 件）*
TWD12,756.00
(不含稅)
TWD13,393.80
(含稅)
添加 30 件 件可免費送貨
有庫存
- 30 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 + | TWD425.20 | TWD12,756.00 |
* 參考價格
- RS庫存編號:
- 215-244
- 製造零件編號:
- SCT070W120G3-4AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -10 to 22 V | |
| Maximum Power Dissipation Pd | 236W | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -10 to 22 V | ||
Maximum Power Dissipation Pd 236W | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Extremely low gate charge and input capacitance
Very fast and robust intrinsic body diode
相關連結
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT015W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT025W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT040W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT020W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin
- STMicroelectronics SCT 1 Type N-Channel MOSFET Enhancement, 4-Pin Hip-247-4 SCT070W120G3-4