STMicroelectronics SCT Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin SCT015W120G3-4AG
- RS庫存編號:
- 215-222
- 製造零件編號:
- SCT015W120G3-4AG
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 管，共 30 件）*
TWD48,213.00
(不含稅)
TWD50,623.80
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月24日 發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 + | TWD1,607.10 | TWD48,213.00 |
* 參考價格
- RS庫存編號:
- 215-222
- 製造零件編號:
- SCT015W120G3-4AG
- 製造商:
- STMicroelectronics
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 4.2 V | |
| Typical Gate Charge Qg @ Vgs | 167nC | |
| Maximum Power Dissipation Pd | 673W | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 4.2 V | ||
Typical Gate Charge Qg @ Vgs 167nC | ||
Maximum Power Dissipation Pd 673W | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Extremely low gate charge and input capacitance
Very fast and robust intrinsic body diode
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