STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 4-Pin SCT027W65G3-4AG

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RS庫存編號:
215-228
製造零件編號:
SCT027W65G3-4AG
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Series

SCT

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

29mΩ

Channel Mode

Enhancement

Forward Voltage Vf

3V

Maximum Gate Source Voltage Vgs

-10 to 22 V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

313W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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