STMicroelectronics SCT Type N-Channel MOSFET, 55 A, 650 V Enhancement, 4-Pin SCT018W65G3-4AG

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RS庫存編號:
482-971
製造零件編號:
SCT018W65G3-4AG
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Series

SCT

Mount Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Length

15.9mm

Height

5.1mm

Standards/Approvals

AEC-Q101

Width

21.1 mm

Automotive Standard

AEC-Q101

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

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