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STMicroelectronics STPOWER Gen3 SiC MOSFET N-Channel, 56 A, 1.2 kV Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4

RS庫存編號:: 671-937
製造零件編號:: SCT025W120G3-4
製造商:: STMicroelectronics

STMicroelectronics STPOWER Gen3 SiC MOSFET N-Channel, 56 A, 1.2 kV Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4

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RS庫存編號:: 671-937
製造零件編號:: SCT025W120G3-4
製造商:: STMicroelectronics

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選取全部	屬性	值
	品牌	STMicroelectronics
	Series	STPOWER Gen3 SiC MOSFET
	Channel Type	N
	Maximum Continuous Drain Current (Id)	56 A
	Maximum Drain Source Voltage (Vds)	1.2 kV
	Channel Mode	Enhancement
	Pin Count	4
	Package Type	Hip-247-4
	Automotive Standard	AEC-Q101
	Height	5.15 mm
	Length	35.9 mm
	Maximum Drain Source Resistance (Rds)	37 mΩ
	Maximum Gate Source Voltage (Vgs)	22 V
	Maximum Operating Temperature	200 °C
	Maximum Power Dissipation (Pd)	389 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Through Hole
	Standards/Approvals	No
	Typical Gate Charge (Qg) @ Vgs	73 nC
	Width	15.9 mm

	選取全部
	品牌 STMicroelectronics
	Series STPOWER Gen3 SiC MOSFET
	Channel Type N
	Maximum Continuous Drain Current (Id) 56 A
	Maximum Drain Source Voltage (Vds) 1.2 kV
	Channel Mode Enhancement
	Pin Count 4
	Package Type Hip-247-4
	Automotive Standard AEC-Q101
	Height 5.15 mm
	Length 35.9 mm
	Maximum Drain Source Resistance (Rds) 37 mΩ
	Maximum Gate Source Voltage (Vgs) 22 V
	Maximum Operating Temperature 200 °C
	Maximum Power Dissipation (Pd) 389 W
	Minimum Operating Temperature -55 °C
	Mount Type Through Hole
	Standards/Approvals No
	Typical Gate Charge (Qg) @ Vgs 73 nC
	Width 15.9 mm

COO (Country of Origin):: CN

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STMicroelectronics STPOWER Gen3 SiC MOSFET N-Channel, 56 A, 1.2 kV Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4

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