STMicroelectronics STPOWER Gen3 SiC MOSFET Type N-Channel, 60 A, 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- RS庫存編號:
- 671-934
- 製造零件編號:
- SCT018HU65G3AG
- 製造商:
- STMicroelectronics
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- RS庫存編號:
- 671-934
- 製造零件編號:
- SCT018HU65G3AG
- 製造商:
- STMicroelectronics
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HU3PAK | |
| Series | STPOWER Gen3 SiC MOSFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 21.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 82.5nC | |
| Maximum Power Dissipation Pd | 388W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 35.9mm | |
| Standards/Approvals | No | |
| Height | 5.15mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HU3PAK | ||
Series STPOWER Gen3 SiC MOSFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 21.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 82.5nC | ||
Maximum Power Dissipation Pd 388W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 35.9mm | ||
Standards/Approvals No | ||
Height 5.15mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- IT