STMicroelectronics STPOWER Gen3 SiC MOSFET N-Channel, 55 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3-7
- RS庫存編號:
- 671-932
- 製造零件編號:
- SCT018H65G3-7
- 製造商:
- STMicroelectronics
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- RS庫存編號:
- 671-932
- 製造零件編號:
- SCT018H65G3-7
- 製造商:
- STMicroelectronics
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Series | STPOWER Gen3 SiC MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current (Id) | 55 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Channel Mode | Enhancement | |
| Pin Count | 7 | |
| Package Type | H2PAK-7 | |
| Automotive Standard | No | |
| Height | 4.8 mm | |
| Length | 15.25 mm | |
| Maximum Drain Source Resistance (Rds) | 20 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 18 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 385 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 79.4 nC | |
| Width | 10.4 mm | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Series STPOWER Gen3 SiC MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current (Id) 55 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Channel Mode Enhancement | ||
Pin Count 7 | ||
Package Type H2PAK-7 | ||
Automotive Standard No | ||
Height 4.8 mm | ||
Length 15.25 mm | ||
Maximum Drain Source Resistance (Rds) 20 mΩ | ||
Maximum Gate Source Voltage (Vgs) 18 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 385 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 79.4 nC | ||
Width 10.4 mm | ||
- COO (Country of Origin):
- CN
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