STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7
- RS庫存編號:
- 214-955
- 製造零件編號:
- SCT027H65G3AG
- 製造商:
- STMicroelectronics
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- RS庫存編號:
- 214-955
- 製造零件編號:
- SCT027H65G3AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK-7 | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 48.6nC | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 2.9V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.25mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Width | 10.4 mm | |
| Height | 4.8mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK-7 | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 48.6nC | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 2.9V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.25mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Width 10.4 mm | ||
Height 4.8mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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