STMicroelectronics SCT Type N-Channel MOSFET, 95 A, 650 V Depletion, 7-Pin H2PAK
- RS庫存編號:
- 202-5480
- 製造零件編號:
- SCTH100N65G2-7AG
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1000 件）*
TWD1,048,100.00
(不含稅)
TWD1,100,500.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月07日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 4000 | TWD1,048.10 | TWD1,048,100.00 |
| 5000 + | TWD1,016.60 | TWD1,016,600.00 |
* 參考價格
- RS庫存編號:
- 202-5480
- 製造零件編號:
- SCTH100N65G2-7AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCT | |
| Package Type | H2PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.02Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 162nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 360W | |
| Forward Voltage Vf | 2.8V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.8 mm | |
| Height | 15.25mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCT | ||
Package Type H2PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.02Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 162nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 360W | ||
Forward Voltage Vf 2.8V | ||
Maximum Operating Temperature 175°C | ||
Width 4.8 mm | ||
Height 15.25mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
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