STMicroelectronics N-Channel STH65N Type N-Channel MOSFET, 51 A, 650 V Enhancement, 7-Pin H2PAK-7 STH65N050DM9-7AG

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RS庫存編號:
481-127
製造零件編號:
STH65N050DM9-7AG
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

650V

Series

STH65N

Package Type

H2PAK-7

Mount Type

Surface

Pin Count

7

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Transistor Configuration

N-Channel

Maximum Operating Temperature

150°C

Length

15.25mm

Standards/Approvals

AEC-Q101

Width

24.3 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics N-Channel Power MOSFET is built on Advanced super-junction MDmesh DM9 technology, designed for medium to high voltage applications. It features extremely low RDS(on) per area and a fast-recovery diode, making it Ideal for high-efficiency switching. The DM9 silicon technology utilizes a multi-drain manufacturing process that enhances device structure and performance. With very low recovery charge (Qrr), fast recovery time (trr), and low RDS(on), this MOSFET is optimized for demanding bridge topologies and ZVS phase-shift converters.

Low gate charge and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Excellent switching performance thanks to the extra driving source pin

AEC-Q101 qualified

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