製造零件編號

STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface Mount

RS庫存編號:: 330-362
製造零件編號:: GH50H65DRB2-7AG
製造商:: STMicroelectronics

STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface Mount

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小計（1 件）*

TWD110.00

(不含稅)

TWD115.50

訂單超過 $1,300.00 免費送貨

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加上 1,850 件從 2026年1月05日起發貨

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單位	每單位
1 - 9	TWD110.00
10 - 99	TWD99.00
100 - 499	TWD92.00
500 - 999	TWD85.00
1000 +	TWD76.00

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RS庫存編號:: 330-362
製造零件編號:: GH50H65DRB2-7AG
製造商:: STMicroelectronics

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選取全部	屬性	值
	品牌	STMicroelectronics
	Maximum Continuous Collector Current	108 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	385 W
	Number of Transistors	1
	Package Type	H2PAK-7
	Mounting Type	Surface Mount
	Pin Count	7

	選取全部
	品牌 STMicroelectronics
	Maximum Continuous Collector Current 108 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 385 W
	Number of Transistors 1
	Package Type H2PAK-7
	Mounting Type Surface Mount
	Pin Count 7

Datasheet - GH50H65DRB2-7AG

COO (Country of Origin):: CN

The STMicroelectronics newest IGBT 650 HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

AEC-Q101 qualified
Maximum junction temperature TJ equal to 175 °C
High speed switching series
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Co-packed with high ruggedness rectifier diode
Excellent switching performance thanks to the extra driving kelvin pin

STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface Mount

訂單超過 $1,300.00 免費送貨

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