STMicroelectronics STGH30H65DFB-2AG Single IGBT, 60 A 650 V H2PAK-2
- RS庫存編號:
- 248-4893
- 製造零件編號:
- STGH30H65DFB-2AG
- 製造商:
- STMicroelectronics
可享批量折扣
小計(1 卷,共 1000 件)*
TWD83,000.00
(不含稅)
TWD87,150.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月25日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD83.00 | TWD83,000.00 |
| 2000 + | TWD80.50 | TWD80,500.00 |
* 參考價格
- RS庫存編號:
- 248-4893
- 製造零件編號:
- STGH30H65DFB-2AG
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 260 W | |
| Package Type | H2PAK-2 | |
| Configuration | Single | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 260 W | ||
Package Type H2PAK-2 | ||
Configuration Single | ||
The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCEsat temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High speed switching series
Safer paralleling
Tight parameter distribution
Low thermal resistance
Soft and very fast recovery antiparallel diode
High speed switching series
Safer paralleling
Tight parameter distribution
Low thermal resistance
Soft and very fast recovery antiparallel diode
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
相關連結
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