STMicroelectronics, Type N-Channel IGBT, 30 A 650 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 202-5514
- 製造零件編號:
- STGWA30HP65FB
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD3,435.00
(不含稅)
TWD3,606.60
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年2月17日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD114.50 | TWD3,435.00 |
| 60 - 90 | TWD111.00 | TWD3,330.00 |
| 120 + | TWD107.70 | TWD3,231.00 |
* 參考價格
- RS庫存編號:
- 202-5514
- 製造零件編號:
- STGWA30HP65FB
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 15.9mm | |
| Width | 21.1 mm | |
| Height | 5.1mm | |
| Series | STG | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 15.9mm | ||
Width 21.1 mm | ||
Height 5.1mm | ||
Series STG | ||
Automotive Standard No | ||
The STMicroelectronics high speed HB series IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
Low thermal resistance
Very fast soft recovery antiparallel diode
相關連結
- STMicroelectronics STGWA30HP65FB 30 A 650 V Through Hole
- STMicroelectronics 3-Pin TO-247, Through Hole
- STMicroelectronics STGW80H65DFB 3-Pin TO-247, Through Hole
- STMicroelectronics 40 A 650 V Through Hole
- STMicroelectronics 145 A 650 V Through Hole
- STMicroelectronics 86 A 650 V Through Hole
- STMicroelectronics 60 A 650 V Through Hole
- STMicroelectronics 50 A 650 V Through Hole