製造零件編號

STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247

RS庫存編號:: 206-7211
製造零件編號:: STGWA75H65DFB2
製造商:: STMicroelectronics

STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247

可享批量折扣

小計（1 管，共 30 件）*

TWD3,987.00

(不含稅)

TWD4,186.20

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月01日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
30 - 30	TWD132.90	TWD3,987.00
60 - 90	TWD130.20	TWD3,906.00
120 +	TWD127.60	TWD3,828.00

* 參考價格

RS庫存編號:: 206-7211
製造零件編號:: STGWA75H65DFB2
製造商:: STMicroelectronics

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	STMicroelectronics
	Maximum Continuous Collector Current	115 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	357 W
	Number of Transistors	1
	Package Type	TO-247
	Pin Count	3
	Transistor Configuration	Single

	選取全部
	品牌 STMicroelectronics
	Maximum Continuous Collector Current 115 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 357 W
	Number of Transistors 1
	Package Type TO-247
	Pin Count 3
	Transistor Configuration Single

Datasheet - STGWA75H65DFB2

The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.

Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient

STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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