STMicroelectronics STGWA75H65DFB2, Type N-Channel IGBT, 115 A 650 V, 3-Pin TO-247, Through Hole

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有IGBTs
可享批量折扣

小計（1 包，共 2 件）*

TWD295.00

(不含稅)

TWD309.76

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 20 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每包*
2 - 6TWD147.50TWD295.00
8 +TWD144.50TWD289.00

* 參考價格

包裝方式：
RS庫存編號:
206-7212
製造零件編號:
STGWA75H65DFB2
製造商:
STMicroelectronics
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

STMicroelectronics

Maximum Continuous Collector Current Ic

115A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

357W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Series

STG

Width

21.1 mm

Length

15.9mm

Height

5.1mm

Standards/Approvals

RoHS

Automotive Standard

No

The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.

Maximum junction temperature: TJ = 175 °C

Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive VCE(sat) temperature coefficient

相關連結