製造零件編號

STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247

RS庫存編號:: 206-6065
製造零件編號:: STGWA30IH65DF
製造商:: STMicroelectronics

STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247

可享批量折扣

小計（1 管，共 30 件）*

TWD4,251.00

(不含稅)

TWD4,463.40

訂單超過 $1,300.00 免費送貨

暫時缺貨

450 件從 2026年6月03日起裝運發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
30 - 30	TWD141.70	TWD4,251.00
60 +	TWD138.90	TWD4,167.00

* 參考價格

RS庫存編號:: 206-6065
製造零件編號:: STGWA30IH65DF
製造商:: STMicroelectronics

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產品詳細資訊

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選取全部	屬性	值
	品牌	STMicroelectronics
	Maximum Continuous Collector Current	60 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	108 W
	Package Type	TO-247
	Pin Count	4

	選取全部
	品牌 STMicroelectronics
	Maximum Continuous Collector Current 60 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 108 W
	Package Type TO-247
	Pin Count 4

Datasheet - STGWA30IH65DF

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Designed for soft commutation only
Maximum junction temperature: TJ = 175 °C
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Minimized tail current
Tight parameter distribution
Low thermal resistance
Low drop voltage freewheeling co-packaged diode
Positive VCE(sat) temperature coefficient

STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247

訂單超過 $1,300.00 免費送貨

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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