製造零件編號

STMicroelectronics STGW75H65DFB2-4 IGBT, 115 A 650 V, 4-Pin TO-247

RS庫存編號:: 206-8629
製造零件編號:: STGW75H65DFB2-4
製造商:: STMicroelectronics

STMicroelectronics STGW75H65DFB2-4 IGBT, 115 A 650 V, 4-Pin TO-247

可享批量折扣

小計（1 包，共 2 件）*

TWD425.00

(不含稅)

TWD446.24

訂單超過 $1,300.00 免費送貨

有庫存

加上 60 件從 2026年1月26日起發貨

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單位	每單位	每包*
2 - 6	TWD212.50	TWD425.00
8 - 14	TWD207.50	TWD415.00
16 +	TWD204.00	TWD408.00

* 參考價格

RS庫存編號:: 206-8629
製造零件編號:: STGW75H65DFB2-4
製造商:: STMicroelectronics

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選取全部	屬性	值
	品牌	STMicroelectronics
	Maximum Continuous Collector Current	115 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	357 W
	Number of Transistors	1
	Package Type	TO-247
	Pin Count	4

	選取全部
	品牌 STMicroelectronics
	Maximum Continuous Collector Current 115 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 357 W
	Number of Transistors 1
	Package Type TO-247
	Pin Count 4

Datasheet - STGW75H65DFB2-4

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Excellent switching performance thanks to the extra driving kelvin pin

STMicroelectronics STGW75H65DFB2-4 IGBT, 115 A 650 V, 4-Pin TO-247

訂單超過 $1,300.00 免費送貨

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