onsemi AFGB40T65SQDN, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-263, Surface
- RS庫存編號:
- 185-8642
- 製造零件編號:
- AFGB40T65SQDN
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD265.00
(不含稅)
TWD278.24
(含稅)
訂單超過 $1,300.00 免費送貨
供應短缺
- 3,124 件準備從其他地點送貨
我們目前的可售庫存有限，並且我們的供應商預計會出現供應短缺的狀況。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 198 | TWD132.50 | TWD265.00 |
| 200 - 398 | TWD129.00 | TWD258.00 |
| 400 + | TWD127.50 | TWD255.00 |
* 參考價格
- RS庫存編號:
- 185-8642
- 製造零件編號:
- AFGB40T65SQDN
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 238W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.65mm | |
| Width | 10.67 mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Height | 4.06mm | |
| Energy Rating | 22.3mJ | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 238W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 9.65mm | ||
Width 10.67 mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Height 4.06mm | ||
Energy Rating 22.3mJ | ||
Automotive Standard AEC-Q101 | ||
不相容
- COO (Country of Origin):
- CN
Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.
VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Low VF soft recovery co-packaged diode
For automotive
Low conduction loss
Low noise and conduction loss
Applications
Automotive On Board Charge
Automotive DC/DC converter for HEV
End Products
EV/PHEV