onsemi FGAF40S65AQ, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole
- RS庫存編號:
- 185-8956
- 製造零件編號:
- FGAF40S65AQ
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 3 件）*
TWD237.00
(不含稅)
TWD248.85
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 3 - 87 | TWD79.00 | TWD237.00 |
| 90 - 177 | TWD77.00 | TWD231.00 |
| 180 + | TWD75.70 | TWD227.10 |
* 參考價格
- RS庫存編號:
- 185-8956
- 製造零件編號:
- FGAF40S65AQ
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 94W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free and is RoHS | |
| Width | 15.3 mm | |
| Length | 19.1mm | |
| Series | Trench | |
| Automotive Standard | No | |
| Energy Rating | 325mJ | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 94W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free and is RoHS | ||
Width 15.3 mm | ||
Length 19.1mm | ||
Series Trench | ||
Automotive Standard No | ||
Energy Rating 325mJ | ||
不相容
- COO (Country of Origin):
- KR
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.
Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application