onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole
- RS庫存編號:
- 185-8956
- 製造零件編號:
- FGAF40S65AQ
- 製造商:
- onsemi
可享批量折扣
小計（1 包，共 3 件）*
TWD237.00
(不含稅)
TWD248.85
(含稅)
訂單超過 $1,300.00 免費送貨
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- 726 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 3 - 87 | TWD79.00 | TWD237.00 |
| 90 - 177 | TWD77.00 | TWD231.00 |
| 180 + | TWD75.70 | TWD227.10 |
* 參考價格
- RS庫存編號:
- 185-8956
- 製造零件編號:
- FGAF40S65AQ
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 94 W | |
| Number of Transistors | 1 | |
| Package Type | TO-3PF | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.7 x 5.7 x 24.7mm | |
| Gate Capacitance | 2590pF | |
| Minimum Operating Temperature | -55 °C | |
| Energy Rating | 325mJ | |
| Maximum Operating Temperature | +175 °C | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 94 W | ||
Number of Transistors 1 | ||
Package Type TO-3PF | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.7 x 5.7 x 24.7mm | ||
Gate Capacitance 2590pF | ||
Minimum Operating Temperature -55 °C | ||
Energy Rating 325mJ | ||
Maximum Operating Temperature +175 °C | ||
不相容
- COO (Country of Origin):
- KR
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.
Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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