onsemi AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount

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小計(1 卷,共 800 件)*

TWD76,480.00

(不含稅)

TWD80,304.00

(含稅)

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800 - 800TWD95.60TWD76,480.00
1600 +TWD93.70TWD74,960.00

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RS庫存編號:
185-7972
製造零件編號:
AFGB40T65SQDN
製造商:
onsemi
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品牌

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

238 W

Package Type

D2PAK

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.67 x 9.65 x 4.58mm

Energy Rating

22.3mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

2495pF

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101

不相容

COO (Country of Origin):
CN
Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.

VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Low VF soft recovery co-packaged diode
For automotive
Low conduction loss
Low noise and conduction loss
Applications
Automotive On Board Charge
Automotive DC/DC converter for HEV
End Products
EV/PHEV

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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